JANTXV1N5553US Microchip Technology
Виробник: Microchip TechnologyDescription: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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Технічний опис JANTXV1N5553US Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A.
Інші пропозиції JANTXV1N5553US
| Фото | Назва | Виробник | Інформація |
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JANTXV1N5553US | Виробник : Semtech Corporation |
Description: DIODE GEN PURP 800V 5A Packaging: Bulk Package / Case: SQ-MELF Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 92pF @ 5V, 1MHz Current - Average Rectified (Io): 5A Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
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JANTXV1N5553US | Виробник : Microchip / Microsemi |
Rectifiers Rectifier |
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