Технічний опис JANTXV1N5554US Microsemi
Description: DIODE GEN PURP 1KV 3A D-5B, Packaging: Bulk, Package / Case: SQ-MELF, E, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: D-5B, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V, Qualification: MIL-PRF-19500/420.
Інші пропозиції JANTXV1N5554US
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
JANTXV1N5554US | Виробник : Microchip Technology |
 Description: DIODE GEN PURP 1KV 3A D-5BPackaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Qualification: MIL-PRF-19500/420 |
товару немає в наявності |
|
 |
JANTXV1N5554US | Виробник : Semtech |
ESD Suppressors / TVS Diodes D MET 3A STD 1KV HRV SM |
товару немає в наявності |