Технічний опис JANTXV1N5615 Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Capacitance @ Vr, F: 45pF @ 12V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V, Grade: Military, Qualification: MIL-PRF-19500/429.
Інші пропозиції JANTXV1N5615
| Фото | Назва | Виробник | Інформація |
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| JANTXV1N5615 | Виробник : Semtech |
 MIL 1A FAST RECTIFIER POWER DISCR 1N5615кількість в упаковці: 1 шт |
товару немає в наявності |
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JANTXV1N5615 | Виробник : Microchip Technology |
Description: DIODE GEN PURP 200V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Military Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
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JANTXV1N5615 | Виробник : Microchip / Microsemi |
Rectifiers UFR,FRR |
товару немає в наявності |