Технічний опис JANTXV1N5618 Microchip / Microsemi
Description: DIODE GEN PURP 600V 1A AXIAL, Qualification: MIL-PRF-19500/427, Current - Reverse Leakage @ Vr: 500 nA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Bulk.
Інші пропозиції JANTXV1N5618
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
JANTXV1N5618 | Microchip Technology |
 Description: DIODE GEN PURP 600V 1A AXIALQualification: MIL-PRF-19500/427 Current - Reverse Leakage @ Vr: 500 nA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Military Operating Temperature - Junction: -65°C ~ 200°C Supplier Device Package: A, Axial Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. |
| JANTXV1N5618 | Semtech Corporation |
Description: D MET 1A STD 600V HRV Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| JANTXV1N5618 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 1A AXIAL
Qualification: MIL-PRF-19500/427
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Description: DIODE GEN PURP 600V 1A AXIAL
Qualification: MIL-PRF-19500/427
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.