Технічний опис JANTXV1N5619 Semtech
Description: DIODE STANDARD 600V 1A AXIAL, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 12V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 600 V, Qualification: MIL-PRF-19500/429.
Інші пропозиції JANTXV1N5619
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| JANTXV1N5619 | Виробник : Semtech |
 1 A, 600 V, SILICON, SIGNAL DIODE POWER DISCR 1N5619кількість в упаковці: 1 шт |
товару немає в наявності |
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JANTXV1N5619 | Виробник : Microchip Technology |
Description: DIODE STANDARD 600V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
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| JANTXV1N5619 | Виробник : Semtech Corporation |
Description: D MET 1A FAST 600V HRV Packaging: Bulk |
товару немає в наявності |