Технічний опис JANTXV1N5819UR-1/TR Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 70pF @ 5V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB (MELF, LL41), Operating Temperature - Junction: -65°C ~ 125°C, Grade: Military, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 45 V, Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A, Current - Reverse Leakage @ Vr: 50 µA @ 45 V, Qualification: MIL-PRF-19500/586.
Інші пропозиції JANTXV1N5819UR-1/TR
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JANTXV1N5819UR-1/TR | Виробник : Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (MELF, LL41) Operating Temperature - Junction: -65°C ~ 125°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V Qualification: MIL-PRF-19500/586 |
товару немає в наявності |
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JANTXV1N5819UR-1/TR | Виробник : Microchip / Microsemi |
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товару немає в наявності |