JANTXV1N6075/TR Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 850MA A-PAK
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 850mA
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/503
Description: DIODE GEN PURP 150V 850MA A-PAK
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 850mA
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/503
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Технічний опис JANTXV1N6075/TR Microchip Technology
Description: DIODE GEN PURP 150V 850MA A-PAK, Packaging: Tape & Reel (TR), Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 850mA, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 155°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A, Current - Reverse Leakage @ Vr: 1 µA @ 150 V, Qualification: MIL-PRF-19500/503.
Інші пропозиції JANTXV1N6075/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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JANTXV1N6075/TR | Виробник : Microchip / Microsemi |
 Rectifiers Rectifier |
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