Технічний опис JANTXV1N6081 Microsemi
Description: DIODE STANDARD 150V 2A G AXIAL, Packaging: Bulk, Package / Case: G, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: G, Axial, Operating Temperature - Junction: -65°C ~ 155°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A, Current - Reverse Leakage @ Vr: 1 µA @ 150 V, Qualification: MIL-PRF-19500/503.
Інші пропозиції JANTXV1N6081
| Фото | Назва | Виробник | Інформація |
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| JANTXV1N6081 | Виробник : Microchip Technology |
 Description: DIODE STANDARD 150V 2A G AXIALPackaging: Bulk Package / Case: G, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: G, Axial Operating Temperature - Junction: -65°C ~ 155°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/503 |
товару немає в наявності |
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JANTXV1N6081 | Виробник : Semtech |
ESD Suppressors / TVS Diodes D MET 5A SFST 150V HRV |
товару немає в наявності |