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JANTXV1N6138US/TR

JANTXV1N6138US/TR Microchip Technology

Виробник: Microchip Technology
Description: TVS DIODE 5.2VWM 11.03VC SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 135.66A
Voltage - Reverse Standoff (Typ): 5.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.14V
Voltage - Clamping (Max) @ Ipp: 11.03V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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Технічний опис JANTXV1N6138US/TR Microchip Technology

Description: TVS DIODE 5.2VWM 11.03VC SQ-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, C, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 135.66A, Voltage - Reverse Standoff (Typ): 5.2V, Supplier Device Package: C, SQ-MELF, Bidirectional Channels: 1, Voltage - Breakdown (Min): 6.14V, Voltage - Clamping (Max) @ Ipp: 11.03V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500/516.

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JANTXV1N6138US/TR JANTXV1N6138US/TR Виробник : Microchip / Microsemi LDS_0278_r2-1593023.pdf ESD Suppressors / TVS Diodes Hi Rel TVS
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