Технічний опис JANTXV1N6621US MICROSEMI
Description: DIODE GEN PURP 440V 1.2A D-5A, Packaging: Bulk, Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 1.2A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 440 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A, Current - Reverse Leakage @ Vr: 500 nA @ 440 V, Qualification: MIL-PRF-19500/585.
Інші пропозиції JANTXV1N6621US
| Фото | Назва | Виробник | Інформація |
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JANTXV1N6621US | Виробник : Microchip Technology |
 Description: DIODE GEN PURP 440V 1.2A D-5APackaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 440 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 440 V Qualification: MIL-PRF-19500/585 |
товару немає в наявності |
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JANTXV1N6621US | Виробник : Microchip / Microsemi |
Rectifiers 440V UFR,FRR SQ SMT |
товару немає в наявності |