Jantxv2N2432 Microchip Technology
Виробник: Microchip Technology
Description: TRANS NPN 30V 100UA TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 µA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Grade: Military
Qualification: MIL-PRF-19500/313
Description: TRANS NPN 30V 100UA TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 µA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Grade: Military
Qualification: MIL-PRF-19500/313
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Технічний опис Jantxv2N2432 Microchip Technology
Description: TRANS NPN 30V 100UA TO18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 175°C (TJ), Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V, Supplier Device Package: TO-18 (TO-206AA), Part Status: Active, Current - Collector (Ic) (Max): 100 µA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 300 mW, Grade: Military, Qualification: MIL-PRF-19500/313.
Інші пропозиції Jantxv2N2432
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| Jantxv2N2432 | Виробник : Microsemi |
 Bipolar Transistors - BJT Small-Signal BJT |
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