Технічний опис JANTXV2N2907AL MICROSEMI
Description: TRANS PNP 60V 0.6A TO-18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-18, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 500 mW, Grade: Military, Qualification: MIL-PRF-19500/291.
Інші пропозиції JANTXV2N2907AL
| Фото | Назва | Виробник | Інформація |
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JANTXV2N2907AL | Виробник : Microchip Technology |
 Description: TRANS PNP 60V 0.6A TO-18Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/291 |
товару немає в наявності |
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| JANTXV2N2907AL | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT BJTs |
товару немає в наявності |