Технічний опис JANTXV2N3439UA MICROSEMI
Description: TRANS NPN 350V 1A UA, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 2µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Supplier Device Package: UA, Grade: Military, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/368.
Інші пропозиції JANTXV2N3439UA
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| JANTXV2N3439UA | Microchip Technology |
 Description: TRANS NPN 350V 1A UAPackaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Grade: Military Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |
| JANTXV2N3439UA | Microchip / Microsemi |
Bipolar Transistors - BJT 350V 1A 800mW Power BJT SMT |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| JANTXV2N3439UA |
|
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| JANTXV2N3439UA |
|
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT 350V 1A 800mW Power BJT SMT
Bipolar Transistors - BJT 350V 1A 800mW Power BJT SMT
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.