JANTXV2N3583 Microchip Technology
Виробник: Microchip Technology
Description: TRANS NPN 175V 1A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 35 W
Description: TRANS NPN 175V 1A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 35 W
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Технічний опис JANTXV2N3583 Microchip Technology
Description: TRANS NPN 175V 1A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Current - Collector Cutoff (Max): 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V, Supplier Device Package: TO-66 (TO-213AA), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 175 V, Power - Max: 35 W.
Інші пропозиції JANTXV2N3583
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANTXV2N3583 | Виробник : Microchip / Microsemi | Bipolar Transistors - BJT Power BJT |
товару немає в наявності |