Технічний опис JANTXV2N3637UB/TR Microchip Technology
Description: TRANS PNP 175V 1A UB, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Supplier Device Package: UB, Grade: Military, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 175 V, Power - Max: 1.5 W, Qualification: MIL-PRF-19500/357.
Інші пропозиції JANTXV2N3637UB/TR
| Фото | Назва | Виробник | Інформація |
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JANTXV2N3637UB/TR | Виробник : Microchip Technology |
Description: TRANS PNP 175V 1A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 175 V Power - Max: 1.5 W Qualification: MIL-PRF-19500/357 |
товару немає в наявності |
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JANTXV2N3637UB/TR | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT 175 V Small-Signal BJT |
товару немає в наявності |