Технічний опис JANTXV2N3700 MICROSEMI
Description: TRANS NPN 80V 1A TO-18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Supplier Device Package: TO-18 (TO-206AA), Grade: Military, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/391.
Інші пропозиції JANTXV2N3700
| Фото | Назва | Виробник | Інформація |
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JANTXV2N3700 | Виробник : ON Semiconductor |
 Trans GP BJT NPN 80V 1A 500mW 3-Pin TO-18 Box |
товару немає в наявності |
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JANTXV2N3700 | Виробник : Microchip Technology |
Description: TRANS NPN 80V 1A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW Qualification: MIL-PRF-19500/391 |
товару немає в наявності |
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JANTXV2N3700 | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT Small-Signal BJT |
товару немає в наявності |