Jantxv2N3766 Microchip Technology
Виробник: Microchip TechnologyDescription: TRANS NPN 60V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/518
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Технічний опис Jantxv2N3766 Microchip Technology
Description: TRANS NPN 60V 4A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V, Supplier Device Package: TO-66 (TO-213AA), Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 25 W, Qualification: MIL-PRF-19500/518.
Інші пропозиції Jantxv2N3766
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| Jantxv2N3766 | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT 60V 4A NPN Power BJT THT |
товару немає в наявності |