JANTXV2N3767P Microchip Technology
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
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Технічний опис JANTXV2N3767P Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C, Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V, Supplier Device Package: TO-66 (TO-213AA), Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 25 W.
Інші пропозиції JANTXV2N3767P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANTXV2N3767P | Виробник : Microchip / Microsemi | Bipolar Transistors - BJT 80V 4A NPN Pin-D Test Power BJT THT |
товару немає в наявності |