Технічний опис JANTXV2N5416UA Microsemi
Description: TRANS PNP 300V 1A UA, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Supplier Device Package: UA, Grade: Military, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 750 mW, Qualification: MIL-PRF-19500/485. 
Інші пропозиції JANTXV2N5416UA
| Фото | Назва | Виробник | Інформація | 
            Доступність             | 
        Ціна | 
|---|---|---|---|---|---|
| JANTXV2N5416UA | Виробник : Microchip Technology | 
            
                         Description: TRANS PNP 300V 1A UAPackaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: UA Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485  | 
        
                             товару немає в наявності                      | 
        ||
| JANTXV2N5416UA | Виробник : Microchip / Microsemi | 
            
                         Bipolar Transistors - BJT 300 V Power BJT         | 
        
                             товару немає в наявності                      | 
        
