Технічний опис JANTXV2N5685
Description: TRANS NPN 60V 50A TO3, Qualification: MIL-PRF-19500/464, Power - Max: 300 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 50 A, Grade: Military, Supplier Device Package: TO-3 (TO-204AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V, Current - Collector Cutoff (Max): 500µA, Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A, Operating Temperature: -55°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk.
Інші пропозиції JANTXV2N5685
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANTXV2N5685 | Виробник : Microchip Technology |
Description: TRANS NPN 60V 50A TO3Qualification: MIL-PRF-19500/464 Power - Max: 300 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 50 A Grade: Military Supplier Device Package: TO-3 (TO-204AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Bulk |
товару немає в наявності |
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JANTXV2N5685 | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT 60V 50A 300W NPN Power BJT THT |
товару немає в наявності |



