Jantxv2N6300 Microchip Technology
Виробник: Microchip TechnologyDescription: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Qualification: MIL-PRF-19500/539
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Технічний опис Jantxv2N6300 Microchip Technology
Description: TRANS NPN DARL 60V 8A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A, Current - Collector Cutoff (Max): 500µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V, Supplier Device Package: TO-66 (TO-213AA), Grade: Military, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 75 W, Qualification: MIL-PRF-19500/539.
Інші пропозиції Jantxv2N6300
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| Jantxv2N6300 | Виробник : Microchip / Microsemi |
Darlington Transistors Power BJT |
товару немає в наявності |