Технічний опис JANTXV2N7370 Microsemi
Description: TRANS NPN DARL 100V 12A TO254AA, Packaging: Bulk, Package / Case: TO-254-3, TO-254AA (Straight Leads), Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V, Supplier Device Package: TO-254AA, Grade: Military, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 100 W, Qualification: MIL-PRF-19500/624.
Інші пропозиції JANTXV2N7370
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANTXV2N7370 | Виробник : Microchip Technology |
 Description: TRANS NPN DARL 100V 12A TO254AAPackaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254AA Grade: Military Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Qualification: MIL-PRF-19500/624 |
товару немає в наявності |
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| JANTXV2N7370 | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
товару немає в наявності |