Технічний опис KBP306GC2 Taiwan Semiconductor
Description: BRIDGE RECT 1PHASE 800V 3A KBP, Packaging: Tube, Package / Case: 4-SIP, KBP, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: KBP, Part Status: Obsolete, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 3 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.
Інші пропозиції KBP306GC2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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KBP306G C2 | Виробник : Taiwan Semiconductor |
 Diode Rectifier Bridge Single 800V 3A 4-Pin Case KBP Tube |
товару немає в наявності |
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| KBP306G C2 | Виробник : Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 3A KBP Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
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KBP306G C2 | Виробник : Taiwan Semiconductor |
Bridge Rectifiers 3A,800V,GLASS PASSIVATED INLINE BRIDGE RECTIFIER |
товару немає в наявності |