Технічний опис KBU603G Taiwan Semiconductor
Description: DIODE BRIDGE 6A 200V KBU, Packaging: Tray, Package / Case: 4-SIP, KBU, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: KBU, Voltage - Peak Reverse (Max): 200 V, Current - Average Rectified (Io): 6 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Інші пропозиції KBU603G
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KBU603G | Виробник : Taiwan Semiconductor Corporation |
 Description: DIODE BRIDGE 6A 200V KBUPackaging: Tray Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товар відсутній |
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KBU603G | Виробник : Taiwan Semiconductor |
Bridge Rectifiers 6A, 200V, Standard Bridge Rectifier |
товар відсутній |