KBU6B-M3/P Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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Технічний опис KBU6B-M3/P Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 6A KBU, Packaging: Bulk, Package / Case: 4-SIP, KBU, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -50°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: KBU, Voltage - Peak Reverse (Max): 100 V, Current - Average Rectified (Io): 6 A, Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.