KSA1013YTA onsemi
Виробник: onsemi
Description: TRANS PNP 160V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
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Технічний опис KSA1013YTA onsemi
Description: TRANS PNP 160V 1A TO-92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 900 mW.
Інші пропозиції KSA1013YTA за ціною від 11.77 грн до 51.53 грн
| Фото | Назва | Виробник | Інформація |
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KSA1013YTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed Mounting: THT Case: TO92 Formed Power dissipation: 0.9W Collector current: 1A Current gain: 160...320 Collector-emitter voltage: 160V Frequency: 50MHz Polarisation: bipolar Kind of package: Ammo Pack Type of transistor: PNP |
на замовлення 3305 шт: термін постачання 14-30 дні (днів) |
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KSA1013YTA | onsemi |
Description: TRANS PNP 160V 1A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 900 mW |
на замовлення 1815 шт: термін постачання 21-31 дні (днів) |
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KSA1013YTA | onsemi |
Bipolar Transistors - BJT PNP Epitaxial Transistor |
на замовлення 14178 шт: термін постачання 21-30 дні (днів) |
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| KSA1013YTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
на замовлення 3305 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 45.58 грн |
| 16+ | 26.92 грн |
| 50+ | 20.40 грн |
| 100+ | 18.03 грн |
| 250+ | 15.32 грн |
| 500+ | 13.46 грн |
| 1000+ | 11.77 грн |
| KSA1013YTA |
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Виробник: onsemi
Description: TRANS PNP 160V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
Description: TRANS PNP 160V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
на замовлення 1815 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.84 грн |
| 11+ | 29.86 грн |
| 100+ | 19.15 грн |
| 500+ | 13.65 грн |
| 1000+ | 12.25 грн |
| KSA1013YTA |
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Виробник: onsemi
Bipolar Transistors - BJT PNP Epitaxial Transistor
Bipolar Transistors - BJT PNP Epitaxial Transistor
на замовлення 14178 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 51.53 грн |
| 11+ | 31.62 грн |
| 100+ | 17.65 грн |
| 500+ | 13.43 грн |