,TO-226_straightlead.jpg "KSA910YSHTA")
KSA910YSHTA onsemi
Виробник: onsemi
Description: TRANS PNP 150V 0.05A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Description: TRANS PNP 150V 0.05A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
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Технічний опис KSA910YSHTA onsemi
Description: TRANS PNP 150V 0.05A TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type: Through Hole, Transistor Type: PNP, Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 800 mW.
Інші пропозиції KSA910YSHTA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
KSA910YSHTA | Виробник : ON Semiconductor / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil |
товару немає в наявності |