KSC1173YTSTUA ON Semiconductor
| Кількість | Ціна |
|---|---|
| 4492+ | 7.87 грн |
| 10000+ | 7.02 грн |
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Технічний опис KSC1173YTSTUA ON Semiconductor
Description: TRANS NPN 30V 3A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: TO-220-3, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 10 W.
Інші пропозиції KSC1173YTSTUA
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| KSC1173YTSTUA | onsemi |
 Description: TRANS NPN 30V 3A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 10 W |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
KSC1173YTSTUA | onsemi / Fairchild |
Bipolar Transistors - BJT NPN Epitaxial Silicon Bipolar Junction Transistor (BJT) |
товару немає в наявності |
В кошику од. на суму грн. |
| KSC1173YTSTUA |
|
Виробник: onsemi
Description: TRANS NPN 30V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
Description: TRANS NPN 30V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
товару немає в наявності
В кошику
од. на суму грн.
| KSC1173YTSTUA |
|
Виробник: onsemi / Fairchild
Bipolar Transistors - BJT NPN Epitaxial Silicon Bipolar Junction Transistor (BJT)
Bipolar Transistors - BJT NPN Epitaxial Silicon Bipolar Junction Transistor (BJT)
товару немає в наявності
В кошику
од. на суму грн.