Технічний опис KSP06BU onsemi / Fairchild
Description: TRANS NPN 80V 0.5A TO92-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Obsolete, Supplier Device Package: TO-92-3, Frequency - Transition: 100MHz.
Інші пропозиції KSP06BU
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
,TO-226_straightlead.jpg "KSP06BU") |
KSP06BU | onsemi |
 Description: TRANS NPN 80V 0.5A TO92-3DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| KSP06BU | Diodes Incorporated |
Bipolar Transistors - BJT |
товару немає в наявності |
В кошику од. на суму грн. |
| KSP06BU |
|
Виробник: onsemi
Description: TRANS NPN 80V 0.5A TO92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
Description: TRANS NPN 80V 0.5A TO92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| KSP06BU |
|
Виробник: Diodes Incorporated
Bipolar Transistors - BJT
Bipolar Transistors - BJT
товару немає в наявності
В кошику
од. на суму грн.