KSP42ATA ON Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 13275+ | 2.67 грн |
| 100000+ | 2.23 грн |
Відгуки про товар
Написати відгук
Технічний опис KSP42ATA ON Semiconductor
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Active, Supplier Device Package: TO-92-3, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Bulk.
Інші пропозиції KSP42ATA
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
KSP42ATA | Fairchild Semiconductor |
 Description: SMALL SIGNAL BIPOLAR TRANSISTORPower - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: TO-92-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| KSP42ATA | Diodes Incorporated |
Bipolar Transistors - BJT |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
KSP42ATA | onsemi / Fairchild |
Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
товару немає в наявності |
В кошику од. на суму грн. |
| KSP42ATA |
|
Виробник: Fairchild Semiconductor
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| KSP42ATA |
|
Виробник: Diodes Incorporated
Bipolar Transistors - BJT
Bipolar Transistors - BJT
товару немає в наявності
В кошику
од. на суму грн.
| KSP42ATA |
|
Виробник: onsemi / Fairchild
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
товару немає в наявності
В кошику
од. на суму грн.