LBN150B01-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: TRANS NPN/PNP 40V 200MA SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-26
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.57 грн |
| 17+ | 18.80 грн |
| 100+ | 12.71 грн |
| 500+ | 9.25 грн |
| 1000+ | 8.36 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
12 шт
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Технічний опис LBN150B01-7 Diodes Incorporated
Description: TRANS NPN/PNP 40V 200MA SOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 300mW, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: SOT-26.
Інші пропозиції LBN150B01-7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
LBN150B01-7 | Diodes Incorporated |
Description: TRANS NPN/PNP 40V 200MA SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-26 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
LBN150B01-7 | Diodes Incorporated |
Description: TRANS NPN/PNP 40V 200MA SOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-26 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
LBN150B01-7 | Diodes Incorporated |
 Bipolar Transistors - BJT ARRAY TRANSISTOR SOT-26 |
товару немає в наявності |
В кошику од. на суму грн. |
| LBN150B01-7 |
Виробник: Diodes Incorporated
Description: TRANS NPN/PNP 40V 200MA SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-26
Description: TRANS NPN/PNP 40V 200MA SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-26
товару немає в наявності
В кошику
од. на суму грн.
| LBN150B01-7 |
Виробник: Diodes Incorporated
Description: TRANS NPN/PNP 40V 200MA SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-26
Description: TRANS NPN/PNP 40V 200MA SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-26
товару немає в наявності
В кошику
од. на суму грн.
| LBN150B01-7 |
|
Виробник: Diodes Incorporated
Bipolar Transistors - BJT ARRAY TRANSISTOR SOT-26
Bipolar Transistors - BJT ARRAY TRANSISTOR SOT-26
товару немає в наявності
В кошику
од. на суму грн.