LGE3M14120Q LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 108A; Idm: 340A; 625W
Drain-source voltage: 1.2kV
Drain current: 108A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 625W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 230nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 340A
Mounting: THT
Case: TO247-4
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис LGE3M14120Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 108A; Idm: 340A; 625W, Drain-source voltage: 1.2kV, Drain current: 108A, On-state resistance: 18mΩ, Type of transistor: N-MOSFET, Power dissipation: 625W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 230nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -4...18V, Pulsed drain current: 340A, Mounting: THT, Case: TO247-4, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M14120Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| LGE3M14120Q | Виробник : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 108A; Idm: 340A; 625W Drain-source voltage: 1.2kV Drain current: 108A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 625W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 230nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 340A Mounting: THT Case: TO247-4 |
товару немає в наявності |