LGE3M25120Q LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 43mΩ
Power dissipation: 370W
Drain current: 60A
Pulsed drain current: 200A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис LGE3M25120Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W, Mounting: THT, Case: TO247-4, Kind of package: tube, On-state resistance: 43mΩ, Power dissipation: 370W, Drain current: 60A, Pulsed drain current: 200A, Drain-source voltage: 1.2kV, Polarisation: unipolar, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Technology: SiC, Gate-source voltage: -5...20V, Gate charge: 54nC, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M25120Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| LGE3M25120Q | Виробник : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W Mounting: THT Case: TO247-4 Kind of package: tube On-state resistance: 43mΩ Power dissipation: 370W Drain current: 60A Pulsed drain current: 200A Drain-source voltage: 1.2kV Polarisation: unipolar Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Gate-source voltage: -5...20V Gate charge: 54nC |
товару немає в наявності |