LGE3M28065Q LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 163nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 211A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 67A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
кількість в упаковці: 1 шт
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Технічний опис LGE3M28065Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 163nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -4...18V, Pulsed drain current: 211A, Mounting: THT, Case: TO247-4, Drain-source voltage: 650V, Drain current: 67A, On-state resistance: 39mΩ, Type of transistor: N-MOSFET, Power dissipation: 326W, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M28065Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| LGE3M28065Q | Виробник : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 163nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 211A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 67A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 326W |
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