LGE3M28065Q LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 67A
Pulsed drain current: 211A
Power dissipation: 326W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 163nC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Kind of package: tube
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис LGE3M28065Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 67A, Pulsed drain current: 211A, Power dissipation: 326W, Case: TO247-4, Gate-source voltage: -4...18V, On-state resistance: 39mΩ, Mounting: THT, Gate charge: 163nC, Features of semiconductor devices: Kelvin terminal, Kind of channel: enhancement, Kind of package: tube, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M28065Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| LGE3M28065Q | Виробник : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 67A Pulsed drain current: 211A Power dissipation: 326W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 39mΩ Mounting: THT Gate charge: 163nC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Kind of package: tube |
товару немає в наявності |