LGE3M30065Q LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 45mΩ
Power dissipation: 300W
Drain current: 54A
Pulsed drain current: 170A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис LGE3M30065Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W, Mounting: THT, Case: TO247-4, Kind of package: tube, On-state resistance: 45mΩ, Power dissipation: 300W, Drain current: 54A, Pulsed drain current: 170A, Drain-source voltage: 650V, Polarisation: unipolar, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Technology: SiC, Gate-source voltage: -5...20V, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M30065Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| LGE3M30065Q | Виробник : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W Mounting: THT Case: TO247-4 Kind of package: tube On-state resistance: 45mΩ Power dissipation: 300W Drain current: 54A Pulsed drain current: 170A Drain-source voltage: 650V Polarisation: unipolar Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Gate-source voltage: -5...20V |
товару немає в наявності |