LL4002G L0G TAIWAN SEMICONDUCTOR
Виробник: TAIWAN SEMICONDUCTOR
Description: TAIWAN SEMICONDUCTOR - LL4002G L0G - Diode mit Standard-Erholzeit, 100 V, 1 A, Einfach, 1.1 V, 30 A
Bauform - Diode: MELF
Durchlassstoßstrom: 30
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.1
Sperrverzögerungszeit: -
Durchschnittlicher Durchlassstrom: 1
Wiederkehrende Spitzensperrspannung: 100
Anzahl der Pins: -
Produktpalette: LL400xG L0G
Betriebstemperatur, max.: 150
SVHC: No SVHC (08-Jul-2021)
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Технічний опис LL4002G L0G TAIWAN SEMICONDUCTOR
Description: DIODE GEN PURP 100V 1A MELF, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: MELF, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Інші пропозиції LL4002G L0G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
LL4002G L0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A MELF Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
| LL4002G L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.