LM2105DR Texas Instruments
Виробник: Texas Instruments
Description: 105-V 0.5-A/0.8-A HALF-BRIDGE GA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5V ~ 18V
Applications: DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 800mA
Technology: NMOS
Supplier Device Package: 8-SOIC
Fault Protection: UVLO
Load Type: Capacitive
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Технічний опис LM2105DR Texas Instruments
Category: MOSFET/IGBT drivers, Description: IC: driver; buck,MOSFET half-bridge; SO8; 250÷800mV; Uin: 0÷18.3V, Type of integrated circuit: driver, Topology: buck; MOSFET half-bridge, Kind of integrated circuit: high-/low-side; MOSFET gate driver, Case: SO8, Output voltage: 250...800mV, Mounting: SMD, Operating temperature: -40...125°C, Kind of package: reel; tape, Supply voltage: 5...18V, Impulse rise time: 115ns, Input voltage: 0...18.3V, Integrated circuit features: integrated bootstrap functionality; UVLO (UnderVoltage LockOut), Pulse fall time: 115ns.
Інші пропозиції LM2105DR за ціною від 21.10 грн до 91.02 грн
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LM2105DR | Texas Instruments |
Description: 105-V 0.5-A/0.8-A HALF-BRIDGE GA Features: Bootstrap Circuit Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 5V ~ 18V Applications: DC Motors, General Purpose Current - Output / Channel: 500mA Current - Peak Output: 800mA Technology: NMOS Supplier Device Package: 8-SOIC Fault Protection: UVLO Load Type: Capacitive |
на замовлення 5082 шт: термін постачання 21-31 дні (днів) |
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LM2105DR | TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; buck,MOSFET half-bridge; SO8; 250÷800mV; Uin: 0÷18.3V Type of integrated circuit: driver Topology: buck; MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output voltage: 250...800mV Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 5...18V Impulse rise time: 115ns Input voltage: 0...18.3V Integrated circuit features: integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Pulse fall time: 115ns |
на замовлення 241 шт: термін постачання 14-30 дні (днів) |
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LM2105DR | Texas Instruments |
Gate Drivers 107-V 0.5-A/0.8-A ha lf-bridge gate drive |
на замовлення 1685 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| LM2105DR |
|
Виробник: Texas Instruments
Description: 105-V 0.5-A/0.8-A HALF-BRIDGE GA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5V ~ 18V
Applications: DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 800mA
Technology: NMOS
Supplier Device Package: 8-SOIC
Fault Protection: UVLO
Load Type: Capacitive
Description: 105-V 0.5-A/0.8-A HALF-BRIDGE GA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5V ~ 18V
Applications: DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 800mA
Technology: NMOS
Supplier Device Package: 8-SOIC
Fault Protection: UVLO
Load Type: Capacitive
на замовлення 5082 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.05 грн |
| 10+ | 33.96 грн |
| 25+ | 30.52 грн |
| 100+ | 25.05 грн |
| 250+ | 23.33 грн |
| 500+ | 22.30 грн |
| 1000+ | 21.10 грн |
| LM2105DR |
|
Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; buck,MOSFET half-bridge; SO8; 250÷800mV; Uin: 0÷18.3V
Type of integrated circuit: driver
Topology: buck; MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output voltage: 250...800mV
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...18V
Impulse rise time: 115ns
Input voltage: 0...18.3V
Integrated circuit features: integrated bootstrap functionality; UVLO (UnderVoltage LockOut)
Pulse fall time: 115ns
Category: MOSFET/IGBT drivers
Description: IC: driver; buck,MOSFET half-bridge; SO8; 250÷800mV; Uin: 0÷18.3V
Type of integrated circuit: driver
Topology: buck; MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output voltage: 250...800mV
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...18V
Impulse rise time: 115ns
Input voltage: 0...18.3V
Integrated circuit features: integrated bootstrap functionality; UVLO (UnderVoltage LockOut)
Pulse fall time: 115ns
на замовлення 241 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.02 грн |
| 10+ | 60.25 грн |
| 25+ | 55.39 грн |
| 100+ | 48.78 грн |
| LM2105DR |
|
Виробник: Texas Instruments
Gate Drivers 107-V 0.5-A/0.8-A ha lf-bridge gate drive
Gate Drivers 107-V 0.5-A/0.8-A ha lf-bridge gate drive
на замовлення 1685 шт:
термін постачання 21-30 дні (днів)