LM5109BQNGTTQ1 Texas Instruments
Виробник: Texas InstrumentsDescription: IC GATE DRVR HALF-BRIDGE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 108 V
Supplier Device Package: 8-WSON (4x4)
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1000+ | 51.80 грн |
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Технічний опис LM5109BQNGTTQ1 Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 8V ~ 14V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 108 V, Supplier Device Package: 8-WSON (4x4), Rise / Fall Time (Typ): 15ns, 15ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 2.2V, Current - Peak Output (Source, Sink): 1A, 1A, Grade: Automotive, Part Status: Active, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Інші пропозиції LM5109BQNGTTQ1 за ціною від 49.63 грн до 125.02 грн
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LM5109BQNGTTQ1 | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 108 V Supplier Device Package: 8-WSON (4x4) Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 1A, 1A Grade: Automotive Part Status: Active DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 4890 шт: термін постачання 21-31 дні (днів) |
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LM5109BQNGTTQ1 | Виробник : Texas Instruments |
Gate Drivers High Volt 1A Peak Ha lf Bridge A 595-LM5109BQNGTRQ1 |
на замовлення 1387 шт: термін постачання 21-30 дні (днів) |
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LM5109BQNGTTQ1 | Виробник : Texas Instruments |
Driver 1A 2-OUT High Side/Low Side Half Brdg Non-Inv 8-Pin WSON EP T/R Automotive AEC-Q100 |
товару немає в наявності |
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LM5109BQNGTTQ1 | Виробник : Texas Instruments |
Driver 1A 2-OUT High Side/Low Side Half Brdg Non-Inv 8-Pin WSON EP T/R Automotive AEC-Q100 |
товару немає в наявності |
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LM5109BQNGTTQ1 | Виробник : Texas Instruments |
Driver 1A 2-OUT High Side/Low Side Half Brdg Non-Inv 8-Pin WSON EP T/R Automotive AEC-Q100 |
товару немає в наявності |
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LM5109BQNGTTQ1 | Виробник : Texas Instruments |
Driver 1A 2-OUT High and Low Side Half Brdg Non-Inv Automotive 8-Pin WSON EP T/R |
товару немає в наявності |
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LM5109BQNGTTQ1 | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2 Type of integrated circuit: driver Output current: -1...1A Number of channels: 2 Mounting: SMD Case: WSON8 Supply voltage: 8...14V DC Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP Kind of integrated circuit: high-/low-side; MOSFET gate driver Operating temperature: -40...125°C кількість в упаковці: 1000 шт |
товару немає в наявності |
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LM5109BQNGTTQ1 | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2 Type of integrated circuit: driver Output current: -1...1A Number of channels: 2 Mounting: SMD Case: WSON8 Supply voltage: 8...14V DC Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP Kind of integrated circuit: high-/low-side; MOSFET gate driver Operating temperature: -40...125°C |
товару немає в наявності |