LM5111-4M/NOPB TEXAS INSTRUMENTS
Виробник: TEXAS INSTRUMENTSCategory: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.97 грн |
| 10+ | 80.47 грн |
| 28+ | 75.61 грн |
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Технічний опис LM5111-4M/NOPB TEXAS INSTRUMENTS
Description: LM5111 DUAL 5A COMPOUND GATE DRI, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 3.5V ~ 14V, Input Type: Inverting, Non-Inverting, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 14ns, 12ns, Channel Type: Independent, Driven Configuration: Low-Side, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.2V, Current - Peak Output (Source, Sink): 3A, 5A, Part Status: Active, DigiKey Programmable: Not Verified.
Інші пропозиції LM5111-4M/NOPB за ціною від 89.24 грн до 213.65 грн
| Фото | Назва | Виробник | Інформація |
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LM5111-4M/NOPB | Виробник : National Semiconductor |
Description: LM5111 DUAL 5A COMPOUND GATE DRI Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 3.5V ~ 14V Input Type: Inverting, Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 14ns, 12ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 3A, 5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1022 шт: термін постачання 21-31 дні (днів) |
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LM5111-4M/NOPB | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 59 шт: термін постачання 7-14 дні (днів) |
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LM5111-4M/NOPB | Виробник : Texas Instruments |
Gate Drivers Dual 5A Compound Driver |
на замовлення 590 шт: термін постачання 21-30 дні (днів) |
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LM5111-4M/NOPB | Виробник : Texas Instruments |
Driver 5A 2-OUT Low Side Inv/Non-Inv 8-Pin SOIC Tube |
товар відсутній |
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LM5111-4M/NOPB | Виробник : Texas Instruments |
Driver 5A 2-OUT Low Side Inv/Non-Inv 8-Pin SOIC Tube |
товар відсутній |
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LM5111-4M/NOPB | Виробник : Texas Instruments |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 3.5V ~ 14V Input Type: Inverting, Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 14ns, 12ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 3A, 5A DigiKey Programmable: Not Verified |
товар відсутній |