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LMG3522R030QRQSTQ1

LMG3522R030QRQSTQ1 Texas Instruments


lmg3522r030-q1.pdf?ts=1695191528363&ref_url=https%253A%252F%252Fwww.ti.com%252Fproduct%252Fde-de%252FLMG3522R030-Q1 Виробник: Texas Instruments
Gate Drivers Automotive 650-V 30- m? GaN FET with inte
на замовлення 128 шт:

термін постачання 21-30 дні (днів)
Кількість Ціна
1+2699.38 грн
10+2162.51 грн
25+1772.50 грн
100+1653.22 грн
250+1595.85 грн
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Технічний опис LMG3522R030QRQSTQ1 Texas Instruments

Description: AUTOMOTIVE 650-V 30-M GAN FET WI, Packaging: Tape & Reel (TR), Features: Slew Rate Controlled, Status Flag, Package / Case: 52-VQFN Exposed Pad, Output Type: N-Channel, Mounting Type: Surface Mount, Wettable Flank, Number of Outputs: 1, Interface: PWM, Switch Type: General Purpose, Operating Temperature: -40°C ~ 125°C (TA), Output Configuration: Low Side, Rds On (Typ): 26mOhm, Input Type: Non-Inverting, Voltage - Load: 650V, Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V, Current - Output (Max): 38A, Ratio - Input:Output: 1:1, Supplier Device Package: 52-VQFN (12x12), Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO, Grade: Automotive, Qualification: AEC-Q100, Type: MOSFET, Configuration: Half Bridge Inverter, Current: 55 A, Voltage: 650 V.

Інші пропозиції LMG3522R030QRQSTQ1 за ціною від 1791.46 грн до 2774.79 грн

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LMG3522R030QRQSTQ1 LMG3522R030QRQSTQ1 Виробник : Texas Instruments lmg3522r030-q1.pdf?ts=1695191528363&ref_url=https%253A%252F%252Fwww.ti.com%252Fproduct%252Fde-de%252FLMG3522R030-Q1 Description: AUTOMOTIVE 650-V 30-M GAN FET WI
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 52-VQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 26mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V
Current - Output (Max): 38A
Ratio - Input:Output: 1:1
Supplier Device Package: 52-VQFN (12x12)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Type: MOSFET
Configuration: Half Bridge Inverter
Current: 55 A
Voltage: 650 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2774.79 грн
10+2171.35 грн
25+2046.34 грн
100+1791.46 грн
В кошику  од. на суму  грн.
LMG3522R030QRQSTQ1 LMG3522R030QRQSTQ1 Виробник : Texas Instruments lmg3522r030-q1.pdf?ts=1695191528363&ref_url=https%253A%252F%252Fwww.ti.com%252Fproduct%252Fde-de%252FLMG3522R030-Q1 Description: AUTOMOTIVE 650-V 30-M GAN FET WI
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 52-VQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 26mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V
Current - Output (Max): 38A
Ratio - Input:Output: 1:1
Supplier Device Package: 52-VQFN (12x12)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Type: MOSFET
Configuration: Half Bridge Inverter
Current: 55 A
Voltage: 650 V
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