LMG3522R030QRQSTQ1 Texas Instruments
на замовлення 128 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2776.02 грн |
| 10+ | 2223.91 грн |
| 25+ | 1822.82 грн |
| 100+ | 1700.16 грн |
| 250+ | 1641.16 грн |
Відгуки про товар
Написати відгук
Технічний опис LMG3522R030QRQSTQ1 Texas Instruments
Description: AUTOMOTIVE 650-V 30-M GAN FET WI, Features: Slew Rate Controlled, Status Flag, Packaging: Tape & Reel (TR), Package / Case: 52-VQFN Exposed Pad, Output Type: N-Channel, Mounting Type: Surface Mount, Wettable Flank, Number of Outputs: 1, Interface: PWM, Type: MOSFET, Configuration: Half Bridge Inverter, Switch Type: General Purpose, Operating Temperature: -40°C ~ 125°C (TA), Output Configuration: Low Side, Rds On (Typ): 26mOhm, Input Type: Non-Inverting, Voltage - Load: 650V, Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V, Current - Output (Max): 38A, Ratio - Input:Output: 1:1, Supplier Device Package: 52-VQFN (12x12), Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO, Grade: Automotive, Current: 55 A, Voltage: 650 V, Qualification: AEC-Q100.
Інші пропозиції LMG3522R030QRQSTQ1 за ціною від 1842.33 грн до 2853.57 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
LMG3522R030QRQSTQ1 | Виробник : Texas Instruments |
 Description: AUTOMOTIVE 650-V 30-M GAN FET WIFeatures: Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) Package / Case: 52-VQFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Inverter Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 26mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V Current - Output (Max): 38A Ratio - Input:Output: 1:1 Supplier Device Package: 52-VQFN (12x12) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO Grade: Automotive Current: 55 A Voltage: 650 V Qualification: AEC-Q100 |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
LMG3522R030QRQSTQ1 | Виробник : Texas Instruments |
Description: AUTOMOTIVE 650-V 30-M GAN FET WI Features: Slew Rate Controlled, Status Flag Packaging: Tape & Reel (TR) Package / Case: 52-VQFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Inverter Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 26mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V Current - Output (Max): 38A Ratio - Input:Output: 1:1 Supplier Device Package: 52-VQFN (12x12) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO Grade: Automotive Current: 55 A Voltage: 650 V Qualification: AEC-Q100 |
товару немає в наявності |