на замовлення 1527 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 55.45 грн |
| 25+ | 44.25 грн |
| 100+ | 36.34 грн |
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Технічний опис LND150N3-G-P013 Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 30mA (Tj), Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V, Power Dissipation (Max): 740mW (Ta), Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V.
Інші пропозиції LND150N3-G-P013
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| LND150N3-G-P013 | Виробник : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 30mA; Idm: 0.03A; 0.74W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30mA Pulsed drain current: 0.03A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1kΩ Mounting: THT Kind of package: Ammo Pack Kind of channel: depletion кількість в упаковці: 1 шт |
товару немає в наявності |
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LND150N3-G-P013 | Виробник : Microchip Technology |
Description: MOSFET N-CH 500V 30MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V |
товару немає в наявності |
|
| LND150N3-G-P013 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30mA; Idm: 0.03A; 0.74W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30mA Pulsed drain current: 0.03A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1kΩ Mounting: THT Kind of package: Ammo Pack Kind of channel: depletion |
товару немає в наявності |