LSIC1MO120G0025 Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET SIC 1200V 70A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 800 V
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Технічний опис LSIC1MO120G0025 Littelfuse Inc.
Description: MOSFET SIC 1200V 70A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4V @ 30mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 800 V.
Інші пропозиції LSIC1MO120G0025
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
LSIC1MO120G0025 | IXYS |
SiC MOSFETs TO247 1.2KV 70A N-CH SIC |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. |
| LSIC1MO120G0025 | LITTELFUSE |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 200A; 500W Technology: SiC Mounting: THT Case: TO247-4 Kind of package: tube Drain current: 70A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 25mΩ Pulsed drain current: 200A Power dissipation: 500W Gate charge: 265nC Polarisation: unipolar Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. |
| LSIC1MO120G0025 |
|
Виробник: IXYS
SiC MOSFETs TO247 1.2KV 70A N-CH SIC
SiC MOSFETs TO247 1.2KV 70A N-CH SIC
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| LSIC1MO120G0025 |
|
Виробник: LITTELFUSE
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 200A; 500W
Technology: SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 25mΩ
Pulsed drain current: 200A
Power dissipation: 500W
Gate charge: 265nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 200A; 500W
Technology: SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 25mΩ
Pulsed drain current: 200A
Power dissipation: 500W
Gate charge: 265nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.