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LSIC2SD120C08

LSIC2SD120C08 Littelfuse

Littelfuse_Power_Semiconductor_SiC_Schottky_LSIC2S-1224874.pdf
Виробник: Littelfuse
Schottky Diodes & Rectifiers 1200V 8A TO-252-2L SiC Schottky Diode
на замовлення 2504 шт:
термін постачання 21-30 дні (днів)
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Технічний опис LSIC2SD120C08 Littelfuse

Description: DIODE SIC 1.2KV 24.5A TO252L, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 454pF @ 1V, 1MHz, Current - Average Rectified (Io): 24.5A, Supplier Device Package: TO-252-2L (DPAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.

Інші пропозиції LSIC2SD120C08

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
LSIC2SD120C08 LSIC2SD120C08 Littelfuse Inc. littelfuse_power_semiconductor_sic_schottky_lsic2sd120c08_datasheet.pdf.pdf Description: DIODE SIC 1.2KV 24.5A TO252L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 454pF @ 1V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
LSIC2SD120C08 LSIC2SD120C08 Littelfuse Inc. littelfuse_power_semiconductor_sic_schottky_lsic2sd120c08_datasheet.pdf.pdf Description: DIODE SIC 1.2KV 24.5A TO252L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 454pF @ 1V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
LSIC2SD120C08 littelfuse_power_semiconductor_sic_schottky_lsic2sd120c08_datasheet.pdf.pdf
LSIC2SD120C08
Виробник: Littelfuse Inc.
Description: DIODE SIC 1.2KV 24.5A TO252L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 454pF @ 1V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
LSIC2SD120C08 littelfuse_power_semiconductor_sic_schottky_lsic2sd120c08_datasheet.pdf.pdf
LSIC2SD120C08
Виробник: Littelfuse Inc.
Description: DIODE SIC 1.2KV 24.5A TO252L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 454pF @ 1V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.