Технічний опис LSIC2SD120D20 Littelfuse
Description: DIODE SIC 1.2KV 54.5A TO2632L, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1142pF @ 1V, 1MHz, Current - Average Rectified (Io): 54.5A, Supplier Device Package: TO-263-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції LSIC2SD120D20
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
LSIC2SD120D20 | Littelfuse Inc. |
 Description: DIODE SIC 1.2KV 54.5A TO2632LPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1142pF @ 1V, 1MHz Current - Average Rectified (Io): 54.5A Supplier Device Package: TO-263-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| LSIC2SD120D20 |
|
Виробник: Littelfuse Inc.
Description: DIODE SIC 1.2KV 54.5A TO2632L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1142pF @ 1V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE SIC 1.2KV 54.5A TO2632L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1142pF @ 1V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.