LSIC2SD120E15CC Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: DIODE SIC 1.2KV 24.5A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 454pF @ 1V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE SIC 1.2KV 24.5A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 454pF @ 1V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 30+ | 517.67 грн |
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Технічний опис LSIC2SD120E15CC Littelfuse Inc.
Description: DIODE SIC 1.2KV 24.5A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 454pF @ 1V, 1MHz, Current - Average Rectified (Io): 24.5A, Supplier Device Package: TO-247AD, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції LSIC2SD120E15CC
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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LSIC2SD120E15CC | Виробник : LITTELFUSE |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; 54/108W Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Load current: 8A x2 Case: TO247-3 Max. forward voltage: 2.2V Max. forward impulse current: 40A Technology: SiC Type of diode: Schottky rectifying Power dissipation: 54/108W Manufacturer series: LSIC2SD Mounting: THT кількість в упаковці: 1 шт |
товару немає в наявності |
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LSIC2SD120E15CC | Виробник : Littelfuse Inc. |
Description: DIODE SIC 1.2KV 24.5A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 454pF @ 1V, 1MHz Current - Average Rectified (Io): 24.5A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товару немає в наявності |
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LSIC2SD120E15CC | Виробник : Littelfuse |
Schottky Diodes & Rectifiers 1200V 15A TO-247-3L SiC Schottky Diode |
товару немає в наявності |
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LSIC2SD120E15CC | Виробник : LITTELFUSE |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; 54/108W Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Load current: 8A x2 Case: TO247-3 Max. forward voltage: 2.2V Max. forward impulse current: 40A Technology: SiC Type of diode: Schottky rectifying Power dissipation: 54/108W Manufacturer series: LSIC2SD Mounting: THT |
товару немає в наявності |