Технічний опис LSIC2SD170B50 LITTELFUSE
Description: DIODE SIL CARB 1700V 135A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 3900pF @ 1V, 1MHz, Current - Average Rectified (Io): 135A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Current - Reverse Leakage @ Vr: 100 µA @ 1700 V.
Інші пропозиції LSIC2SD170B50
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LSIC2SD170B50 | Виробник : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 3900pF @ 1V, 1MHz Current - Average Rectified (Io): 135A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 100 µA @ 1700 V |
товару немає в наявності |
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LSIC2SD170B50 | Виробник : Littelfuse |
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товару немає в наявності |