Технічний опис MAP6KE39A MICROSEMI
Description: TVS DIODE 33.3VWM 53.9VC T18, Packaging: Bulk, Package / Case: T-18, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 11.2A, Voltage - Reverse Standoff (Typ): 33.3V, Supplier Device Package: T-18, Unidirectional Channels: 1, Voltage - Breakdown (Min): 37.1V, Voltage - Clamping (Max) @ Ipp: 53.9V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500.
Інші пропозиції MAP6KE39A
| Фото | Назва | Виробник | Інформація |
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MAP6KE39A | Виробник : Microchip Technology |
 Description: TVS DIODE 33.3VWM 53.9VC T18Packaging: Bulk Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.2A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: T-18 Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
товару немає в наявності |
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| MAP6KE39A | Виробник : Microchip Technology |
ESD Protection Diodes / TVS Diodes TVS 39V 5% 600W uni |
товару немає в наявності |