Технічний опис MAP6KE47CAE3 MICROSEMI
Description: TVS DIODE 40.2VWM 64.8VC T18, Packaging: Bulk, Package / Case: T-18, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 9.3A, Voltage - Reverse Standoff (Typ): 40.2V, Supplier Device Package: T-18, Bidirectional Channels: 1, Voltage - Breakdown (Min): 44.7V, Voltage - Clamping (Max) @ Ipp: 64.8V, Power - Peak Pulse: 600W, Power Line Protection: No, Part Status: Active, Grade: Military, Qualification: MIL-PRF-19500.
Інші пропозиції MAP6KE47CAE3
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MAP6KE47CAE3 | Виробник : Microchip Technology |
 Description: TVS DIODE 40.2VWM 64.8VC T18Packaging: Bulk Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.3A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: T-18 Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
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| MAP6KE47CAE3 | Виробник : Microchip Technology |
ESD Protection Diodes / TVS Diodes TVS 47V 5% 600W bi |
товару немає в наявності |