MASMCJ6.0CAE3 MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 145.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 145.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 425.07 грн |
3+ | 351 грн |
7+ | 331.58 грн |
Відгуки про товар
Написати відгук
Технічний опис MASMCJ6.0CAE3 MICROCHIP (MICROSEMI)
Description: TVS DIODE 6VWM 10.3VC DO214AB, Packaging: Bulk, Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 145.6A, Voltage - Reverse Standoff (Typ): 6V, Supplier Device Package: DO-214AB (SMCJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 6.67V, Voltage - Clamping (Max) @ Ipp: 10.3V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500.
Інші пропозиції MASMCJ6.0CAE3 за ціною від 397.9 грн до 510.08 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MASMCJ6.0CAE3 | Виробник : MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 6V Breakdown voltage: 6.67V Max. forward impulse current: 145.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1mA кількість в упаковці: 1 шт |
на замовлення 12 шт: термін постачання 7-14 дні (днів) |
|
|||||||||
MASMCJ6.0CAE3 | Виробник : MICROSEMI |
SMCJ/1500 W, BIDIRECTIONAL, SILICON, TVS DIODE MASMCJ6.0 кількість в упаковці: 1 шт |
товар відсутній |
||||||||||
MASMCJ6.0CAE3 | Виробник : Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 145.6A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товар відсутній |
||||||||||
MASMCJ6.0CAE3 | Виробник : Microsemi | ESD Suppressors / TVS Diodes Bi-Directional TVS |
товар відсутній |
||||||||||
MASMCJ6.0CAE3 | Виробник : Microchip Technology | ESD Suppressors / TVS Diodes Hi Rel TVS |
товар відсутній |