Технічний опис MB3045S-E3/4W Vishay Semiconductors
Description: DIODE SCHOTTKY 45V 30A TO263AB, Current - Reverse Leakage @ Vr: 200 µA @ 45 V, Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A, Voltage - DC Reverse (Vr) (Max): 45 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 30A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції MB3045S-E3/4W
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MB3045S-E3/4W | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 45V 30A TO263ABCurrent - Reverse Leakage @ Vr: 200 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 30A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |